Images are for reference only.
See Product Specifications for product details.
| Part Number | IPB60R120C7ATMA1 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 390µA |
| Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 400V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 92W (Tc) |
| Rds On (Max) @ Id, Vgs | 120 mOhm @ 7.8A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3 |
| Package / Case | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
|
IPB60R040C7ATMA1 | Infineon Technologies | MOSFET N-CH 600V TO263-3 | 0 | Details | |
|
IPB60R060C7ATMA1 | Infineon Technologies | MOSFET N-CH 600V TO263-3 | 0 | Details | |
 |
IPB60R060P7ATMA1 | Infineon Technologies | MOSFET N-CH TO263-3 | - | 17734 | Details |
 |
IPB60R080P7ATMA1 | Infineon Technologies | MOSFET N-CH TO263-3 | - | 22187 | Details |
 |
IPB60R099C6 | Infineon Technologies | MOSFET N-CH 600V 37.9A TO263 | - | 0 | Details |
 |
IPB60R099C6ATMA1 | Infineon Technologies | MOSFET N-CH 600V 37.9A TO263 | - | 19308 | Details |
|
IPB60R099C7ATMA1 | Infineon Technologies | MOSFET N-CH 600V TO263-3 | 0 | Details | |
 |
IPB60R099CP | Infineon Technologies | MOSFET N-CH 600V 31A D2PAK | - | 3000 | Details |
 |
IPB60R099CPAATMA1 | Infineon Technologies | MOSFET N-CH 600V 31A TO263-3 | - | 0 | Details |
 |
IPB60R099CPATMA1 | Infineon Technologies | MOSFET N-CH 600V 31A D2PAK | - | 15017 | Details |
 |
IPB60R099P7ATMA1 | Infineon Technologies | MOSFET N-CH TO263-3 | - | 25850 | Details |
|
IPB60R120C7ATMA1 | Infineon Technologies | MOSFET N-CH 600V TO263-3 | 0 | Details |