IPAW60R280CEXKSA1

MOSFET N-CH 600V TO220-3
IPAW60R280CEXKSA1 P1
IPAW60R280CEXKSA1 P1
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Infineon Technologies ~ IPAW60R280CEXKSA1

Part Number
IPAW60R280CEXKSA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 600V TO220-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IPAW60R280CEXKSA1.pdf IPAW60R280CEXKSA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number IPAW60R280CEXKSA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 19.3A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 3.5V @ 430µA
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 100V
Vgs (Max) ±20V
FET Feature Super Junction
Power Dissipation (Max) 32W (Tc)
Rds On (Max) @ Id, Vgs 280 mOhm @ 6.5A, 10V
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220 Full Pack
Package / Case TO-220-3 Full Pack

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