FF900R12IE4VPBOSA1

MODULE IGBT PRIME2-1
FF900R12IE4VPBOSA1 P1
FF900R12IE4VPBOSA1 P1
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Infineon Technologies ~ FF900R12IE4VPBOSA1

Part Number
FF900R12IE4VPBOSA1
Manufacturer
Infineon Technologies
Description
MODULE IGBT PRIME2-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- FF900R12IE4VPBOSA1 PDF online browsing
Family
Transistors - IGBTs - Modules
  • In Stock : 109 pcs
  • Reference Price : submit a request

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Product Parameter

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Part Number FF900R12IE4VPBOSA1
Part Status Active
IGBT Type Trench Field Stop
Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 900A
Power - Max 20mW
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 900A
Current - Collector Cutoff (Max) 5mA
Input Capacitance (Cies) @ Vce 54nF @ 25V
Input Standard
NTC Thermistor Yes
Operating Temperature -40°C ~ 150°C
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module

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