BSZ014NE2LS5IFATMA1

MOSFET N-CH 25V 31A 8TSDSON
BSZ014NE2LS5IFATMA1 P1
BSZ014NE2LS5IFATMA1 P1
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Infineon Technologies ~ BSZ014NE2LS5IFATMA1

Part Number
BSZ014NE2LS5IFATMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 25V 31A 8TSDSON
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
BSZ014NE2LS5IFATMA1.pdf BSZ014NE2LS5IFATMA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number BSZ014NE2LS5IFATMA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 31A (Ta), 40A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 12V
Vgs (Max) ±16V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 2.1W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs 1.45 mOhm @ 20A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8-FL
Package / Case 8-PowerTDFN

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