BSM75GB170DN2HOSA1

IGBT 1700V 110A 625W MODULE
BSM75GB170DN2HOSA1 P1
BSM75GB170DN2HOSA1 P1
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Infineon Technologies ~ BSM75GB170DN2HOSA1

Part Number
BSM75GB170DN2HOSA1
Manufacturer
Infineon Technologies
Description
IGBT 1700V 110A 625W MODULE
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- BSM75GB170DN2HOSA1 PDF online browsing
Family
Transistors - IGBTs - Modules
  • In Stock : 339 pcs
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Product Parameter

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Part Number BSM75GB170DN2HOSA1
Part Status Obsolete
IGBT Type -
Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 1700V
Current - Collector (Ic) (Max) 110A
Power - Max 625W
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 75A
Current - Collector Cutoff (Max) -
Input Capacitance (Cies) @ Vce 11nF @ 25V
Input Standard
NTC Thermistor No
Operating Temperature 150°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module

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