FQI27P06TU

MOSFET P-CH 60V 27A I2PAK
FQI27P06TU P1
FQI27P06TU P1
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Fairchild/ON Semiconductor ~ FQI27P06TU

Part Number
FQI27P06TU
Manufacturer
Fairchild/ON Semiconductor
Description
MOSFET P-CH 60V 27A I2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- FQI27P06TU PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number FQI27P06TU
Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 27A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V
Vgs (Max) ±25V
FET Feature -
Power Dissipation (Max) 3.75W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs 70 mOhm @ 13.5A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

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