FDS2670

MOSFET N-CH 200V 3A 8-SO
FDS2670 P1
FDS2670 P1
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Fairchild/ON Semiconductor ~ FDS2670

Part Number
FDS2670
Manufacturer
Fairchild/ON Semiconductor
Description
MOSFET N-CH 200V 3A 8-SO
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- FDS2670 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 2500 pcs
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Product Parameter

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Part Number FDS2670
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1228pF @ 100V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 2.5W (Ta)
Rds On (Max) @ Id, Vgs 130 mOhm @ 3A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)

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