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Ver especificaciones del producto para detalles del producto.
| Número de pieza | S1JM RSG |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | 600V |
| Corriente - promedio rectificado (Io) | 1A |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.1V @ 1A |
| Velocidad | Standard Recovery >500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | 780ns |
| Current - Reverse Leakage @ Vr | 1µA @ 600V |
| Capacitancia @ Vr, F | 5pF @ 4V, 1MHz |
| Tipo de montaje | Surface Mount |
| Paquete / caja | 2-SMD, Flat Lead |
| Paquete de dispositivo del proveedor | Micro SMA |
| Temperatura de funcionamiento - unión | -55°C ~ 175°C |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
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S1J | Fairchild/ON Semiconductor | DIODE GEN PURP 600V 1A SMA | - | 37500 | Detalles |
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S1J M2G | Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 1A DO214AC | - | 1361872 | Detalles |
|
S1J R3G | Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 1A DO214AC | - | 1041432 | Detalles |
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S1J-13 | Diodes Incorporated | DIODE GEN PURP 600V 1A SMA | 0 | Detalles | |
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S1J-13-F | Diodes Incorporated | DIODE GEN PURP 600V 1A SMA | - | 154000 | Detalles |
 |
S1J-E3/51T | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 1A DO214AC | 0 | Detalles | |
 |
S1J-E3/5AT | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 1A DO214AC | - | 0 | Detalles |
 |
S1J-E3/61T | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 1A DO214AC | - | 90000 | Detalles |
|
S1J-F | SMC Diode Solutions | SMT GLASS PASSIVATED RECTIFIER | - | 25822 | Detalles |
|
S1J-JR2 | Taiwan Semiconductor Corporation | STANDARD RECOVERY RECTIFIER | - | 8406 | Detalles |
|
S1J-JR3 | Taiwan Semiconductor Corporation | STANDARD RECOVERY RECTIFIER | - | 25809 | Detalles |
|
S1J-KR2G | Taiwan Semiconductor Corporation | STANDARD RECOVERY RECTIFIER | - | 1769008 | Detalles |