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| Número de pieza | S1B R3G |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | 100V |
| Corriente - promedio rectificado (Io) | 1A |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.1V @ 1A |
| Velocidad | Standard Recovery >500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | 1.5µs |
| Current - Reverse Leakage @ Vr | 1µA @ 100V |
| Capacitancia @ Vr, F | 12pF @ 4V, 1MHz |
| Tipo de montaje | Surface Mount |
| Paquete / caja | DO-214AC, SMA |
| Paquete de dispositivo del proveedor | DO-214AC (SMA) |
| Temperatura de funcionamiento - unión | -55°C ~ 175°C |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
 |
S1B | Fairchild/ON Semiconductor | DIODE GEN PURP 100V 1A SMA | - | 75000 | Detalles |
|
S1B M2G | Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 1A DO214AC | - | 1401280 | Detalles |
|
S1B R3G | Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 1A DO214AC | - | 975995 | Detalles |
 |
S1B-13 | Diodes Incorporated | DIODE GEN PURP 100V 1A SMA | 0 | Detalles | |
 |
S1B-13-F | Diodes Incorporated | DIODE GEN PURP 100V 1A SMA | - | 645000 | Detalles |
 |
S1B-E3/51T | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 1A DO214AC | 0 | Detalles | |
 |
S1B-E3/5AT | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 1A DO214AC | - | 0 | Detalles |
 |
S1B-E3/61T | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 1A DO214AC | - | 21600 | Detalles |
|
S1B-F | SMC Diode Solutions | SMT GLASS PASSIVATED RECTIFIER | - | 25828 | Detalles |
|
S1B-LTP | Micro Commercial Co | DIODE GEN PURP 100V 1A DO214AA | - | 1033100 | Detalles |
 |
S1B-M3/5AT | Vishay Semiconductor Diodes Division | DIODE GPP 1A 100V DO-214AC | - | 0 | Detalles |
 |
S1B-M3/61T | Vishay Semiconductor Diodes Division | DIODE GPP 1A 100V DO-214AC | - | 0 | Detalles |