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| Número de pieza | ES3G R7G |
|---|---|
| Estado de la pieza | Not For New Designs |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | 400V |
| Corriente - promedio rectificado (Io) | 3A |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.3V @ 3A |
| Velocidad | Fast Recovery =< 500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | 35ns |
| Current - Reverse Leakage @ Vr | 10µA @ 400V |
| Capacitancia @ Vr, F | 30pF @ 4V, 1MHz |
| Tipo de montaje | Surface Mount |
| Paquete / caja | DO-214AB, SMC |
| Paquete de dispositivo del proveedor | DO-214AB (SMC) |
| Temperatura de funcionamiento - unión | -55°C ~ 150°C |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
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ES3A R7G | Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 3A DO214AB | - | 345704 | Detalles |
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ES3A V6G | Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 3A DO214AB | - | 508180 | Detalles |
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ES3A V7G | Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 3A DO214AB | - | 446207 | Detalles |
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ES3A-13 | Diodes Incorporated | DIODE GEN PURP 50V 3A SMC | 0 | Detalles | |
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ES3A-13-F | Diodes Incorporated | DIODE GEN PURP 50V 3A SMC | - | 3000 | Detalles |
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ES3A-E3/51T | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 3A DO214AB | 0 | Detalles | |
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ES3A-E3/57T | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 3A DO214AB | - | 16 | Detalles |
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ES3A-E3/9AT | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 3A DO214AB | - | 0 | Detalles |
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ES3A-M3/57T | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 3A DO214AB | - | 0 | Detalles |