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| Número de pieza | MSRT200100(A)D |
|---|---|
| Estado de la pieza | Active |
| Configuración de Diodo | 1 Pair Series Connection |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | 1000V |
| Corriente - Rectificado promedio (Io) (por diodo) | 200A |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.1V @ 200A |
| Velocidad | Standard Recovery >500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | - |
| Current - Reverse Leakage @ Vr | 10µA @ 1000V |
| Temperatura de funcionamiento - unión | -55°C ~ 150°C |
| Tipo de montaje | Chassis Mount |
| Paquete / caja | Three Tower |
| Paquete de dispositivo del proveedor | Three Tower |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
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MSRT200100(A) | GeneSiC Semiconductor | DIODE MODULE 1KV 200A 3TOWER | 0 | Detalles | |
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MSRT200100(A)D | GeneSiC Semiconductor | DIODE GEN 1KV 200A 3 TOWER | 0 | Detalles | |
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MSRT200120(A) | GeneSiC Semiconductor | DIODE MODULE 1.2KV 200A 3TOWER | 0 | Detalles | |
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MSRT200120(A)D | GeneSiC Semiconductor | DIODE GEN 1.2KV 200A 3 TOWER | 0 | Detalles | |
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MSRT200140(A) | GeneSiC Semiconductor | DIODE MODULE 1.4KV 200A 3TOWER | 0 | Detalles | |
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MSRT200140(A)D | GeneSiC Semiconductor | DIODE GEN 1.4KV 200A 3 TOWER | 0 | Detalles | |
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MSRT200160(A) | GeneSiC Semiconductor | DIODE MODULE 1.6KV 200A 3TOWER | 0 | Detalles | |
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MSRT200160(A)D | GeneSiC Semiconductor | DIODE GEN 1.6KV 200A 3 TOWER | 0 | Detalles | |
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MSRT20060(A) | GeneSiC Semiconductor | DIODE MODULE 600V 200A 3TOWER | 0 | Detalles | |
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MSRT20060(A)D | GeneSiC Semiconductor | DIODE GEN PURP 600V 200A 3 TOWER | 0 | Detalles | |
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MSRT20080(A) | GeneSiC Semiconductor | DIODE MODULE 800V 200A 3TOWER | 0 | Detalles | |
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MSRT20080(A)D | GeneSiC Semiconductor | DIODE GEN PURP 800V 200A 3 TOWER | 0 | Detalles |