SSM6H19NU,LF

MOSFET N-CH 40V 2A 6UDFN
SSM6H19NU,LF P1
SSM6H19NU,LF P1
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Toshiba Semiconductor and Storage ~ SSM6H19NU,LF

Part Number
SSM6H19NU,LF
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET N-CH 40V 2A 6UDFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SSM6H19NU,LF PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number SSM6H19NU,LF
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 1.8V, 8V
Vgs(th) (Max) @ Id 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 2.2nC @ 4.2V
Input Capacitance (Ciss) (Max) @ Vds 130pF @ 10V
Vgs (Max) ±12V
FET Feature -
Power Dissipation (Max) 1W (Ta)
Rds On (Max) @ Id, Vgs 185 mOhm @ 1A, 8V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-UDFN (2x2)
Package / Case 6-UDFN Exposed Pad

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