NDD03N50Z-1G

MOSFET N-CH 500V 2.6A IPAK
NDD03N50Z-1G P1
NDD03N50Z-1G P1
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ON Semiconductor ~ NDD03N50Z-1G

Part Number
NDD03N50Z-1G
Manufacturer
ON Semiconductor
Description
MOSFET N-CH 500V 2.6A IPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- NDD03N50Z-1G PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number NDD03N50Z-1G
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 2.6A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 274pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 58W (Tc)
Rds On (Max) @ Id, Vgs 3.3 Ohm @ 1.15A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-Pak
Package / Case TO-251-3 Short Leads, IPak, TO-251AA

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