IPC028N03L3X1SA1

MOSFET N-CH 30V SAWN BARE DIE
IPC028N03L3X1SA1 P1
IPC028N03L3X1SA1 P1
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Infineon Technologies ~ IPC028N03L3X1SA1

Part Number
IPC028N03L3X1SA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 30V SAWN BARE DIE
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IPC028N03L3X1SA1.pdf IPC028N03L3X1SA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number IPC028N03L3X1SA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2A (Tj)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds -
Vgs (Max) -
FET Feature -
Power Dissipation (Max) -
Rds On (Max) @ Id, Vgs 50 mOhm @ 2A, 10V
Operating Temperature -
Mounting Type Surface Mount
Supplier Device Package Sawn on foil
Package / Case Die

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