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See Product Specifications for product details.
| Part Number | BSB104N08NP3GXUSA1 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 50A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 40µA |
| Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100pF @ 40V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 42W (Tc) |
| Rds On (Max) @ Id, Vgs | 10.4 mOhm @ 10A, 10V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | MG-WDSON-2, CanPAK M™ |
| Package / Case | 3-WDSON |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
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BSB104N08NP3GXUSA1 | Infineon Technologies | MOSFET N-CH 80V 13A 2WDSON | 0 | Details |