EMB4T2R

TRANS 2PNP PREBIAS 0.15W EMT6
EMB4T2R P1
EMB4T2R P2
EMB4T2R P1
EMB4T2R P2
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Rohm Semiconductor ~ EMB4T2R

Part Number
EMB4T2R
Manufacturer
Rohm Semiconductor
Description
TRANS 2PNP PREBIAS 0.15W EMT6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
EMB4T2R.pdf EMB4T2R PDF online browsing
Family
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
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Product Parameter

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Part Number EMB4T2R
Part Status Active
Transistor Type 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max) -
Frequency - Transition 250MHz
Power - Max 150mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package EMT6

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