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| Número de pieza | TPC8408,LQ(S |
|---|---|
| Estado de la pieza | Active |
| Tipo de FET | N and P-Channel |
| Característica FET | Logic Level Gate |
| Drene a la fuente de voltaje (Vdss) | 40V |
| Corriente - Drenaje continuo (Id) a 25 ° C | 6.1A, 5.3A |
| Rds On (Max) @ Id, Vgs | 32 mOhm @ 3.1A, 10V |
| Vgs (th) (Max) @ Id | 2.3V @ 100µA |
| Carga de puerta (Qg) (Max) @ Vgs | 24nC @ 10V |
| Capacitancia de entrada (Ciss) (Max) @ Vds | 850pF @ 10V |
| Potencia - Max | 450mW |
| Temperatura de funcionamiento | 150°C (TJ) |
| Tipo de montaje | Surface Mount |
| Paquete / caja | 8-SOIC (0.154", 3.90mm Width) |
| Paquete de dispositivo del proveedor | 8-SOP |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
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TPC8.2AHM3/86A | Vishay Semiconductor Diodes Division | TVS DIODE 7.02VWM 12.1VC SMPC | - | 0 | Detalles |
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TPC8.2AHM3/87A | Vishay Semiconductor Diodes Division | TVS DIODE 7.02VWM 12.1VC SMPC | - | 0 | Detalles |
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TPC8.2AHM3_A/H | Vishay Semiconductor Diodes Division | TVS DIODE 12.1VC 124A TO277A | 0 | Detalles | |
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TPC8.2AHM3_A/I | Vishay Semiconductor Diodes Division | TVS DIODE 12.1VC 124A TO277A | 0 | Detalles | |
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TPC8.2HM3/86A | Vishay Semiconductor Diodes Division | TVS DIODE 6.63VWM 12.5VC SMPC | - | 0 | Detalles |
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TPC8.2HM3/87A | Vishay Semiconductor Diodes Division | TVS DIODE 6.63VWM 12.5VC SMPC | - | 0 | Detalles |
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TPC8012-H(TE12L,Q) | Toshiba Semiconductor and Storage | MOSFET N-CH 200V 1.8A 8-SOP | - | 0 | Detalles |
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TPC8014(TE12L,Q,M) | Toshiba Semiconductor and Storage | MOSFET N-CH 30V 11A SOP8 2-6J1B | 0 | Detalles | |
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TPC8018-H(TE12LQM) | Toshiba Semiconductor and Storage | MOSFET N-CH 30V 18A SOP8 2-6J1B | 0 | Detalles | |
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TPC8021-H(TE12LQ,M | Toshiba Semiconductor and Storage | MOSFET N-CH 30V 11A SOP8 2-6J1B | 0 | Detalles | |
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TPC8022-H(TE12LQ,M | Toshiba Semiconductor and Storage | MOSFET N-CH 40V 7.5A SOP8 2-6J1B | 0 | Detalles | |
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TPC8026(TE12L,Q,M) | Toshiba Semiconductor and Storage | MOSFET N-CH 30V 13A 8-SOIC | 0 | Detalles |