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| Número de pieza | TPC8207(TE12L) |
|---|---|
| Estado de la pieza | Discontinued at Digi-Key |
| Tipo de FET | 2 N-Channel (Dual) |
| Característica FET | Logic Level Gate |
| Drene a la fuente de voltaje (Vdss) | 20V |
| Corriente - Drenaje continuo (Id) a 25 ° C | 6A |
| Rds On (Max) @ Id, Vgs | 20 mOhm @ 4.8A, 4V |
| Vgs (th) (Max) @ Id | 1.2V @ 200µA |
| Carga de puerta (Qg) (Max) @ Vgs | 22nC @ 5V |
| Capacitancia de entrada (Ciss) (Max) @ Vds | 2010pF @ 10V |
| Potencia - Max | 450mW |
| Temperatura de funcionamiento | 150°C (TJ) |
| Tipo de montaje | Surface Mount |
| Paquete / caja | 8-SOIC (0.173", 4.40mm Width) |
| Paquete de dispositivo del proveedor | 8-SOP (5.5x6.0) |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
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TPC8207(TE12L) | Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 6A 8-SOP | 0 | Detalles | |
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TPC8207(TE12L,Q) | Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 6A 8-SOP | 0 | Detalles | |
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TPC8208(TE12L,Q) | Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 5A 8-SOP | 0 | Detalles | |
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TPC8208(TE12L,Q,M) | Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 5A SOP8 | 0 | Detalles | |
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TPC8211(TE12L,Q,M) | Toshiba Semiconductor and Storage | MOSFET 2N-CH 30V 5.5A SOP8 | 0 | Detalles | |
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TPC8212-H(TE12LQ,M | Toshiba Semiconductor and Storage | MOSFET 2N-CH 30V 6A SOP8 | 0 | Detalles | |
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TPC8213-H(TE12LQ,M | Toshiba Semiconductor and Storage | MOSFET 2N-CH 60V 5A SOP8 | 0 | Detalles | |
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TPC8221-H,LQ(S | Toshiba Semiconductor and Storage | MOSFET 2N-CH 30V 6A 8SOP | 0 | Detalles | |
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TPC8223-H,LQ(S | Toshiba Semiconductor and Storage | MOSFET 2N-CH 30V 9A 8SOP | - | 0 | Detalles |