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Ver especificaciones del producto para detalles del producto.
| Número de pieza | 1SS367,H3F |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Schottky |
| Voltaje - DC Reverse (Vr) (Max) | 10V |
| Corriente - promedio rectificado (Io) | 100mA |
| Voltaje - Adelante (Vf) (Máx) @ Si | 500mV @ 100mA |
| Velocidad | Small Signal =< 200mA (Io), Any Speed |
| Tiempo de recuperación inversa (trr) | - |
| Current - Reverse Leakage @ Vr | 20µA @ 10V |
| Capacitancia @ Vr, F | 40pF @ 0V, 1MHz |
| Tipo de montaje | Surface Mount |
| Paquete / caja | SC-76, SOD-323 |
| Paquete de dispositivo del proveedor | - |
| Temperatura de funcionamiento - unión | 125°C (Max) |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
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1SS300,LF | Toshiba Semiconductor and Storage | DIODE ARRAY GP 80V 100MA USM | - | 0 | Detalles |
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1SS301,LF | Toshiba Semiconductor and Storage | DIODE ARRAY GP 80V 100MA USM | - | 0 | Detalles |
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1SS301SU,LF | Toshiba Semiconductor and Storage | DIODE ARRAY GP 80V 100MA SC70 | - | 0 | Detalles |
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1SS302A,LF | Toshiba Semiconductor and Storage | DIODE SW 80V 100MA USM SC70 | 0 | Detalles | |
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1SS302TE85LF | Toshiba Semiconductor and Storage | DIODE ARRAY GP 80V 100MA SC70 | - | 6000 | Detalles |
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1SS306TE85LF | Toshiba Semiconductor and Storage | DIODE ARRAY GP 200V 100MA SC61B | - | 0 | Detalles |
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1SS307(TE85L,F) | Toshiba Semiconductor and Storage | DIODE GEN PURP 30V 100MA SMINI | - | 0 | Detalles |
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1SS307E,L3F | Toshiba Semiconductor and Storage | DIODE SW GP 80V 100MA ESC | 9628 | Detalles | |
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1SS308(TE85L,F | Toshiba Semiconductor and Storage | DIODE ARRAY GP 80V 100MA SC74A | - | 0 | Detalles |
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1SS309(TE85L,F) | Toshiba Semiconductor and Storage | DIODE ARRAY GP 80V 100MA SMV | - | 6000 | Detalles |
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1SS315TPH3F | Toshiba Semiconductor and Storage | DIODE SCHOTTKY 5V 30MA USC | 9060 | Detalles | |
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1SS319(TE85L,F) | Toshiba Semiconductor and Storage | DIODE SCHOTKY GP 40V 100MA SC61B | - | 9000 | Detalles |