| Artikelnummer |
SIZF916DT-T1-GE3 |
| Teilstatus |
Active |
| FET Typ |
2 N-Channel (Dual) |
| FET-Eigenschaft |
Standard |
| Drain auf Source-Spannung (Vdss) |
30V |
| Strom - Dauerablass (Id) @ 25 ° C |
23A (Ta), 40A (Tc) |
| Rds Ein (Max) @ Id, Vgs |
4 mOhm @ 10A, 10V, 1.25 mOhm @ 10A, 10V |
| Vgs (th) (Max) @ Id |
2.4V @ 250µA, 2.2V @ 250µA |
| Gate Ladung (Qg) (Max) @ Vgs |
22nC @ 10V, 95nC @ 10V |
| Eingangskapazität (Ciss) (Max) @ Vds |
1060pF @ 15V, 4320pF @ 15V |
| Leistung max |
3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc) |
| Betriebstemperatur |
-55°C ~ 150°C (TJ) |
| Befestigungsart |
Surface Mount |
| Paket / Fall |
8-PowerWDFN |
| Lieferantengerätepaket |
8-PowerPair® (6x5) |
