CSD19532KTT

MOSFET N-CH 100V 200A DDPAK-3
CSD19532KTT P1
CSD19532KTT P1
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Texas Instruments ~ CSD19532KTT

Part Number
CSD19532KTT
Manufacturer
Texas Instruments
Description
MOSFET N-CH 100V 200A DDPAK-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- CSD19532KTT PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number CSD19532KTT
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 200A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 6V, 10V
Vgs(th) (Max) @ Id 3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 5060pF @ 50V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Rds On (Max) @ Id, Vgs 5.6 mOhm @ 90A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DDPAK/TO-263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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