RQ3E150GNTB

MOSFET N-CH 30V 15A 8-HSMT
RQ3E150GNTB P1
RQ3E150GNTB P1
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Rohm Semiconductor ~ RQ3E150GNTB

Part Number
RQ3E150GNTB
Manufacturer
Rohm Semiconductor
Description
MOSFET N-CH 30V 15A 8-HSMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- RQ3E150GNTB PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number RQ3E150GNTB
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 15A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 15.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 850pF @ 15V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 2W (Ta), 17.2W (Tc)
Rds On (Max) @ Id, Vgs 6.1 mOhm @ 15A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-HSMT (3.2x3)
Package / Case 8-PowerVDFN

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