R6002ENDTL

MOSFET N-CH 600V 1.7A CPT3
R6002ENDTL P1
R6002ENDTL P1
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Rohm Semiconductor ~ R6002ENDTL

Part Number
R6002ENDTL
Manufacturer
Rohm Semiconductor
Description
MOSFET N-CH 600V 1.7A CPT3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
R6002ENDTL.pdf R6002ENDTL PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number R6002ENDTL
Part Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 1.7A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 65pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 20W (Tc)
Rds On (Max) @ Id, Vgs 3.4 Ohm @ 500mA, 10V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package CPT3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

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