MS1227

TRANS RF BIPO 80W 4.5A M113
MS1227 P1
MS1227 P1
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Microsemi Corporation ~ MS1227

Part Number
MS1227
Manufacturer
Microsemi Corporation
Description
TRANS RF BIPO 80W 4.5A M113
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- MS1227 PDF online browsing
Family
Transistors - Bipolar (BJT) - RF
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Product Parameter

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Part Number MS1227
Part Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 18V
Frequency - Transition 30MHz
Noise Figure (dB Typ @ f) -
Gain 15dB
Power - Max 80W
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A, 5V
Current - Collector (Ic) (Max) 4.5A
Operating Temperature 200°C (TJ)
Mounting Type Chassis Mount
Package / Case M113
Supplier Device Package M113

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