Images are for reference only.
See Product Specifications for product details.
| Part Number | JAN2N6798 |
|---|---|
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 42.07nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
| Rds On (Max) @ Id, Vgs | 420 mOhm @ 5.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-39 |
| Package / Case | TO-205AF Metal Can |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
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JAN1N1184 | Microsemi Corporation | DIODE GEN PURP 100V 35A DO203AB | - | 0 | Details |
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JAN1N1186 | Microsemi Corporation | DIODE GEN PURP 200V 35A DO203AB | - | 0 | Details |
|
JAN1N1186R | Microsemi Corporation | DIODE GEN PURP 200V 35A DO203AB | - | 0 | Details |
 |
JAN1N1188 | Microsemi Corporation | DIODE GEN PURP 400V 35A DO5 | - | 1 | Details |
|
JAN1N1188R | Microsemi Corporation | DIODE GEN PURP 400V 35A DO203AB | - | 0 | Details |
|
JAN1N1190 | Microsemi Corporation | DIODE GEN PURP 600V 35A DO203AB | - | 0 | Details |
|
JAN1N1190R | Microsemi Corporation | DIODE GEN PURP 600V 35A DO203AB | - | 0 | Details |
|
JAN1N1202A | Microsemi Corporation | DIODE GEN PURP 200V 12A DO203AA | - | 0 | Details |
|
JAN1N1202AR | Microsemi Corporation | DIODE GEN PURP 200V 12A DO203AA | - | 0 | Details |
|
JAN1N1204A | Microsemi Corporation | DIODE GEN PURP 400V 12A DO203AA | - | 0 | Details |
|
JAN1N1204AR | Microsemi Corporation | DIODE GEN PURP 400V 12A DO203AA | - | 0 | Details |
|
JAN1N1206A | Microsemi Corporation | DIODE GEN PURP 600V 12A DO203AA | - | 0 | Details |