IXDI602SI

2A 8 SOIC EXP METAL DUAL INVERT
IXDI602SI P1
IXDI602SI P1
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IXYS Integrated Circuits Division ~ IXDI602SI

Part Number
IXDI602SI
Manufacturer
IXYS Integrated Circuits Division
Description
2A 8 SOIC EXP METAL DUAL INVERT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IXDI602SI.pdf IXDI602SI PDF online browsing
Family
PMIC - Gate Drivers
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Product Parameter

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Part Number IXDI602SI
Part Status Active
Driven Configuration Low-Side
Channel Type Independent
Number of Drivers 2
Gate Type IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply 4.5 V ~ 35 V
Logic Voltage - VIL, VIH 0.8V, 3V
Current - Peak Output (Source, Sink) 2A, 2A
Input Type Inverting
High Side Voltage - Max (Bootstrap) -
Rise / Fall Time (Typ) 7.5ns, 6.5ns
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package 8-SOIC-EP

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