IXTT30N50P

MOSFET N-CH 500V 30A TO-268 D3
IXTT30N50P P1
IXTT30N50P P2
IXTT30N50P P1
IXTT30N50P P2
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IXYS ~ IXTT30N50P

Part Number
IXTT30N50P
Manufacturer
IXYS
Description
MOSFET N-CH 500V 30A TO-268 D3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IXTT30N50P PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number IXTT30N50P
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 4150pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 460W (Tc)
Rds On (Max) @ Id, Vgs 200 mOhm @ 15A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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