IXTH1N300P3HV

2000V TO 3000V POLAR3 POWER MOSF
IXTH1N300P3HV P1
IXTH1N300P3HV P1
Images are for reference only.
See Product Specifications for product details.

IXYS ~ IXTH1N300P3HV

Part Number
IXTH1N300P3HV
Manufacturer
IXYS
Description
2000V TO 3000V POLAR3 POWER MOSF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IXTH1N300P3HV.pdf IXTH1N300P3HV PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 14 pcs
  • Reference Price : submit a request

Submit a Request For Quotation on quantities greater than those displayed.

Product Parameter

All Products

Part Number IXTH1N300P3HV
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 3000V
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 895pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 195W (Tc)
Rds On (Max) @ Id, Vgs 50 Ohm @ 500mA, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247HV
Package / Case TO-247-3 Variant

Related Products

All Products