GP2M005A060PGH

MOSFET N-CH 600V 4.2A IPAK
GP2M005A060PGH P1
GP2M005A060PGH P1
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Global Power Technologies Group ~ GP2M005A060PGH

Part Number
GP2M005A060PGH
Manufacturer
Global Power Technologies Group
Description
MOSFET N-CH 600V 4.2A IPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
GP2M005A060PGH.pdf GP2M005A060PGH PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number GP2M005A060PGH
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 4.2A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 658pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 98.4W (Tc)
Rds On (Max) @ Id, Vgs 2.1 Ohm @ 2.1A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-Pak
Package / Case TO-251-3 Short Leads, IPak, TO-251AA

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