GP1M009A020FG

MOSFET N-CH 200V 9A TO220F
GP1M009A020FG P1
GP1M009A020FG P1
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Global Power Technologies Group ~ GP1M009A020FG

Part Number
GP1M009A020FG
Manufacturer
Global Power Technologies Group
Description
MOSFET N-CH 200V 9A TO220F
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
GP1M009A020FG.pdf GP1M009A020FG PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number GP1M009A020FG
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 414pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 17.3W (Tc)
Rds On (Max) @ Id, Vgs 400 mOhm @ 4.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F
Package / Case TO-220-3 Full Pack

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