2N7635-GA

TRANS SJT 650V 4A TO-257
2N7635-GA P1
2N7635-GA P1
Images are for reference only.
See Product Specifications for product details.

GeneSiC Semiconductor ~ 2N7635-GA

Part Number
2N7635-GA
Manufacturer
GeneSiC Semiconductor
Description
TRANS SJT 650V 4A TO-257
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
2N7635-GA.pdf 2N7635-GA PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 0 pcs
  • Reference Price : submit a request

Submit a Request For Quotation on quantities greater than those displayed.

Product Parameter

All Products

Part Number 2N7635-GA
Part Status Active
FET Type -
Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 4A (Tc) (165°C)
Drive Voltage (Max Rds On,Min Rds On) -
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 324pF @ 35V
Vgs (Max) -
FET Feature -
Power Dissipation (Max) 47W (Tc)
Rds On (Max) @ Id, Vgs 415 mOhm @ 4A
Operating Temperature -55°C ~ 225°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-257
Package / Case TO-257-3

Related Products

All Products