SIR696DP-T1-GE3

MOSFET N-CH 125V 60A SO8
SIR696DP-T1-GE3 P1
SIR696DP-T1-GE3 P1
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Vishay Siliconix ~ SIR696DP-T1-GE3

Part Number
SIR696DP-T1-GE3
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 125V 60A SO8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SIR696DP-T1-GE3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number SIR696DP-T1-GE3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 125V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 7.5V, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1410pF @ 75V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 104W (Tc)
Rds On (Max) @ Id, Vgs 11.5 mOhm @ 20A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8

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