Images are for reference only.
See Product Specifications for product details.
| Part Number | APT11GP60BDQBG |
|---|---|
| Part Status | Obsolete |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 41A |
| Current - Collector Pulsed (Icm) | 45A |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 11A |
| Power - Max | 187W |
| Switching Energy | 46µJ (on), 90µJ (off) |
| Input Type | Standard |
| Gate Charge | 40nC |
| Td (on/off) @ 25°C | 7ns/29ns |
| Test Condition | 400V, 11A, 5 Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
APT11F80B | Microsemi Corporation | MOSFET N-CH 800V 12A TO-247 | - | 0 | Details |
 |
APT11F80S | Microsemi Corporation | MOSFET N-CH 800V 12A D3PAK | - | 0 | Details |
 |
APT11GF120BRDQ1G | Microsemi Corporation | IGBT 1200V 25A 156W TO247 | 0 | Details | |
 |
APT11GF120KRG | Microsemi Corporation | IGBT 1200V 25A 156W TO220 | 0 | Details | |
 |
APT11GP60BDQBG | Microsemi Corporation | IGBT 600V 41A 187W TO247 | - | 23778 | Details |
 |
APT11N80BC3G | Microsemi Corporation | MOSFET N-CH 800V 11A TO-247 | - | 91 | Details |
 |
APT11N80KC3G | Microsemi Corporation | MOSFET N-CH 800V 11A TO-220 | - | 0 | Details |